IGBT - IXGX60N60C2D1 HIPERFAST IGBT + DIODE 600V 75A 35NS

Brand: GERMANY

Group: Semiconductor

Subgroup: IGBT

Model / Brand: IXYS

Stock: Please Call.

قیمت: 1,500,000 Tomman

Download PDF file

Keywords: IXGX60N60C2D1

 

 

Detail:

Maximum power dissipation (Pc) of IGBT transistor, W: Maximum collector-emitter voltage |Uce|, V: 600V Collector-emitter saturation voltage |Ucesat|, V: 2.5V Maximum gate-emitter voltage |Ueg|, V: Maximum collector current |Ic|, A: 75A Maximum junction temperature (Tj), °C: Rise time, nS: 35 Maximum collector capacity (Cc), pF: Package: PLUS247